Fabrication and mobility characteristics of SiGe surface channel pMOSFETs with a HfO2/TiN gate stack

✍ Scribed by Weber, O.; Damlencourt, J.-F.; Andrieu, F.; Ducroquet, F.; Ernst, T.; Hartmann, J.-M.; Papon, A.-M.; Renault, O.; Guillaumot, B.; Deleonibus, S.

• Book ID: 114618117
• Publisher: IEEE
• Year: 2006
• Tongue: English
• Weight: 953 KB
• Volume: 53
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2005.863536