Fabrication and characteristics of transparent conducting In2O3–ZnO thin films by ultrasonic spray pyrolysis

✍ Scribed by Jin-Hong Lee; Seung-Yup Lee; Byung-Ok Park

• Publisher: Elsevier Science
• Year: 2006
• Tongue: English
• Weight: 276 KB
• Volume: 127
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/j.mseb.2005.10.008

✦ Synopsis

Transparent conducting In 2 O 3 -ZnO thin films were prepared by ultrasonic spray pyrolysis technique. Indium nitrate trihydrate (In(NO 3 ) 3 •3H 2 O) and zinc acetate dihydrate (Zn(CH 3 COO) 2 •2H 2 O) were used as precursors and a solvent was 2-methoxyethanol. The thin films, as a function of Zn/(Zn + In) atomic ratio (abbreviated to x), were annealed at 550 • C. Oxygen gas was used as both carrier and reactor gas. From analyzing X-ray diffraction patterns, In 2 O 3 phase and ZnO phase were formed at x = 0.11 and 0.89, respectively, while homologous phases of In 2 O 3 -ZnO were observed between x = 0.5 and 0.67. The resistivity of the thin film increased until x = 0.33 and then decreased to be the lowest value (1.47 × 10 -2 cm) at x = 0.5. In the range of x = 0.6-1, the resistivity increased again with x. The highest carrier concentration and the highest Hall mobility were 2.02 × 10 19 cm -3 at x = 0.6 and 15.89 cm 2 /V s at x = 0.5, respectively. The optical transmittance in the visible region at x = 0.5 was 88-92%.