Fabrication and characteristics of tin-doped n-layers into gallium arsenide by an open-tube diffusion process: P. J. Ledakovitch, R. Agarwal and S. K. Ghandhi. Solid-St. Electron.30, 681 (1987)

• Publisher: Elsevier Science
• Year: 1988
• Tongue: English
• Weight: 132 KB
• Volume: 28
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/0026-2714(88)90233-8