Fabrication and characteristics of MOS-FET's incorporating anodic aluminum oxide in the gate structure : R. K. Raymond and Mukunda B. Das. Solid-State Electronics19, 181 (1976)

• Publisher: Elsevier Science
• Year: 1976
• Tongue: English
• Weight: 118 KB
• Volume: 15
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/0026-2714(76)90718-6