๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Extrinsic silicon photodetector characterization: errata

โœ Scribed by Garcia, J. P. ;Dereniak, E. L.


Book ID
115340939
Publisher
The Optical Society
Year
1990
Tongue
English
Weight
336 KB
Volume
29
Category
Article
ISSN
1559-128X

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Fabrication and characterization of low
โœ P.R. Bandaru; S. Sahni; E. Yablonovitch; J. Liu; H.-Jun Kim; Y.-H. Xie ๐Ÿ“‚ Article ๐Ÿ“… 2004 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 204 KB

P-n hetero-junctions were fabricated by depositing p-Ge thin films on n-Si substrates using molecular beam epitaxy and electron-beam evaporation, with processing temperatures less than 450 โ€ข C, to be compatible with back-end silicon processing. The surface preparation of the Si substrate prior to Ge