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Extrinsic photoconductivity spectra of diamond heavily doped with boron

✍ Scribed by O.I Smirnova; A.G Gontar


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
93 KB
Volume
93
Category
Article
ISSN
0038-1098

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## Abstract Heavily boron doped 1.8 to 2.4 Β΅m thick homoepitaxial diamond films with 1.5 Γ— 10^21^ cm^–3^ ≀ [B] ≀ 1.75 Γ— 10^21^ cm^–3^ have been deposited directly on their (100) Ib substrates at 830 Β°C. Their cathodoluminescence spectra probe the controlled thicknesses from 0.28 to 2.8 Β΅m, therefor

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## Abstract As‐grown (100) homoepitaxial diamond films with boron concentrations [B] from 4.6 Γ— 10^16^ to 1.5 Γ— 10^21^ cm^–3^ have been analysed using X‐ray photoelectron spectroscopy (XPS). Their C 1s core levels contain a dominant component around 284.17 Β± 0.2 eV ascribed to sp^3^ C and a main se