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Extremely uniform, reproducible growth of device quality InGaAsP:InP heterostructures in the T-shaped reactor at atmospheric pressure

✍ Scribed by A. Mircea; A. Ougazzaden; P. Dasté; Y. Gao; C. Kazmierski; J.-C. Bouley; A. Carenco


Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
868 KB
Volume
93
Category
Article
ISSN
0022-0248

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