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Extremely high electron mobilities in modulation doped Ga1−xInxAs/InP heterostructures grown by LP-MOVPE

✍ Scribed by Hilde Hardtdegen; R. Meyer; Hilde Løken-Larsen; J. Appenzeller; Th. Schäipers; H. Liith


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
177 KB
Volume
116
Category
Article
ISSN
0022-0248

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