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Extraction of eleven model parameters for consistent reproduction of lateral bipolar snapback high-current I-V characteristics in NMOS devices

✍ Scribed by Ming-Jer Chen; Hun-Shung Lee; Shuenn-Tarng Chen


Book ID
114538707
Publisher
IEEE
Year
2001
Tongue
English
Weight
219 KB
Volume
48
Category
Article
ISSN
0018-9383

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