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Extraction of an avalanche diode noise model for its application as an on-wafer noise source

✍ Scribed by M. C. Maya; A. Lázaro; L. Pradell


Publisher
John Wiley and Sons
Year
2003
Tongue
English
Weight
138 KB
Volume
38
Category
Article
ISSN
0895-2477

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✦ Synopsis


Abstract

This paper presents a method to characterize the excess noise ratio (ENR) of an unmatched avalanche noise diode for application as an on‐wafer noise source. It is based on the determination of a broadband device noise circuit‐model from its measured reflection coefficient and noise powers. Measured ENR is used to calibrated a noise receiver up to 40 GHz. © 2003 Wiley Periodicals, Inc. Microwave Opt Technol Lett 38: 89–92, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10979