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Extended Point Defects in Crystalline Materials: Ge and Si

✍ Scribed by Cowern, N. E. B.; Simdyankin, S.; Ahn, C.; Bennett, N. S.; Goss, J. P.; Hartmann, J.-M.; Pakfar, A.; Hamm, S.; Valentin, J.; Napolitani, E.; De Salvador, D.; Bruno, E.; Mirabella, S.


Book ID
120161688
Publisher
The American Physical Society
Year
2013
Tongue
English
Weight
519 KB
Volume
110
Category
Article
ISSN
0031-9007

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## Abstract The effect of point defects created by γ‐irradiation and extended defects created by Pb‐ion irradiation on the behavior of the critical current density, __J__~c~ in several superconductors have been investigated. We have found a limitation of the role of both types of defects on enhanci