Neutral dangling bond depletion in amorp
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M.S. Sercheli; C. Rettori; A.R. Zanatta
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Article
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2003
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Elsevier Science
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English
β 182 KB
Amorphous silicon -nitrogen (a-SiN) thin films doped with rare-earth elements (RE ΒΌ Y, La, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Yb, and Lu) were prepared by cosputtering and studied by means of electron spin resonance. It was found that the neutral dangling bond density, Β½D 0 ; of the a-SiN films decreas