Exploring the magnetically induced field effect in carbon nanotube-based devices

✍ Scribed by G. Fedorov; A. Tselev; D. Jimenez; S. Latil; N.G. Kalugin; P. Barbara; D. Smirnov; S. Roche

• Publisher: Elsevier Science
• Year: 2008
• Tongue: English
• Weight: 392 KB
• Volume: 40
• Category: Article
• ISSN: 1386-9477
• DOI: 10.1016/j.physe.2007.08.123

✦ Synopsis

We report on the high magnetic field study of transport properties of gated small diameter (quasi)-metallic single wall carbon nanotubes (CNTs). We show that initially metallic CNT devices operate as CNT field-effect transistors under strong magnetic fields. This effect results from the Aharonov-Bohm phenomena at the origin of a band gap opening in metallic nanotubes. Strong exponential magnetoresistance observed up to room temperature is the ultimate consequence of the linear increase of the band gap with a magnetic field. Finally, we show that intrinsic characteristics of a quasi-metallic CNT, such as the helical symmetry, as well as the parameters of the Schottky barriers formed at the contacts, can be deduced from temperature-dependent magnetoconductance measurements.