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Explanation of current crowding phenomena induced by impact ionization in advanced Si bipolar transistors by means of electrical measurements and light emission microscopy

✍ Scribed by Paolo Pavan; Loris Vendrame; Stefano Bigliardi; Arlette Marty; Alain Chantre; Enrico Zanoni


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
334 KB
Volume
19
Category
Article
ISSN
0167-9317

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