Explaining the parameters of the electron valence-band tunneling related Lorentzian noise in fully depleted SOI MOSFETs

✍ Scribed by E. Simoen; A. Mercha; J. Rafi; C. Claeys; N. Lukyanchikova; N. Garbar

• Book ID: 126639103
• Publisher: IEEE
• Year: 2003
• Tongue: English
• Weight: 291 KB
• Volume: 24
• Category: Article
• ISSN: 0741-3106
• DOI: 10.1109/LED.2003.820644