Experimental validation of an accelerated method of oxide-trap-level characterization for predicting long term thermal effects in metal oxide semiconductor devices

✍ Scribed by Saigne, F.; Dusseau, L.; Fesquet, J.; Gasiot, J.; Ecoffet, R.; David, J.P.; Schrimpf, R.D.; Galloway, K.F.

• Book ID: 118024494
• Publisher: IEEE
• Year: 1997
• Tongue: English
• Weight: 740 KB
• Volume: 44
• Category: Article
• ISSN: 0018-9499
• DOI: 10.1109/23.658981