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Experimental threshold voltage fluctuations of 30 nm-NMOS-transistors manufactured by a lithography independent structure definition process

✍ Scribed by John T. Horstmann; Klaus T. Kallis; Horst L. Fiedler


Book ID
104052119
Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
382 KB
Volume
86
Category
Article
ISSN
0167-9317

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