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Experimental study of the organic light emitting diode with a p-type silicon anode

✍ Scribed by G.L. Ma; A.G. Xu; G.Z. Ran; Y.P. Qiao; B.R. Zhang; W.X. Chen; L. Dai; G.G. Qin

Book ID
108289140
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
123 KB
Volume
496
Category
Article
ISSN
0040-6090

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Effects of resistivity of a p-Si chip on
Effects of resistivity of a p-Si chip on the light-emitting efficiency of a top-emission organic light-emitting diode with the p-Si chip as the anode
✍ Xu, A. G. ;Ran, G. Z. ;Wu, Z. L. ;Ma, G. L. ;Qiao, Y. P. ;Xu, Y. H. ;Yang, B. R. 📂 Article 📅 2006 🏛 John Wiley and Sons 🌐 English ⚖ 177 KB

## Abstract For the top‐emission organic light‐emitting diode (TOLED) with a structure of p‐Si/SiO~__x__~/N,N′‐bis‐(1‐naphthl)‐diphenyl‐1,1′‐biphenyl‐4,4′‐diamine (NPB)/tris‐(8‐hydroxyquinoline) aluminum (AlQ)/Sm/Au, we found the resistivity of the p‐Si anode has a great effect on the hole injectio