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Experimental study of Si substitution by Ge in Ge-alloyed SiC epitaxial growth on

โœ Scribed by Diani, M.; Kubler, L.; Simon, L.; Aubel, D.; Matko, I.; Chenevier, B.


Book ID
120382362
Publisher
The American Physical Society
Year
2003
Tongue
English
Weight
101 KB
Volume
67
Category
Article
ISSN
1098-0121

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