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Experimental study of nonstationary electron transport in sub-0.1 μm metal–oxide–silicon devices: Velocity overshoot and its degradation mechanism

✍ Scribed by Mizuno, Tomohisa; Ohba, Ryuji


Book ID
120589046
Publisher
American Institute of Physics
Year
1997
Tongue
English
Weight
317 KB
Volume
82
Category
Article
ISSN
0021-8979

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