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Experimental study of low voltage anode hole injection in thin oxides

โœ Scribed by David Esseni; Jeff D Bude; Luca Selmi

Book ID
104305644
Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
192 KB
Volume
59
Category
Article
ISSN
0167-9317

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โœฆ Synopsis

In the context of an assessment of the physical mechanisms governing thin oxide degradation, this paper reports an experimental investigation of anode hole injection (AHI) at low gate voltages (V ) and of its correlation to SILC generation. G A new technique based on carrier separation measurements is introduced to interpret the behavior of the gate current (I ) G during constant V stress experiments. Our results indicate that AHI is still operative at lower uV u than previously thought.

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The interface between the organic layer and the Indium Tin Oxide (ITO) layer of an organic light-emitting diode (OLED) is crucial to the performance of the device. An ultra-thin Ag 2 O film, used as an anode modification layer, has been employed on ITO surface through the UVozone treatment of Ag fil