Experimental study of a pulsed microwave plasma assisted chemical vapour deposition of carbon nanotubes
β Scribed by Belmahi, M. ;Le Brizoual, L. ;Assouar, M. B. ;Tousch, T. ;Vergnat, M. ;Bougdira, J. ;Alnot, P.
- Publisher
- John Wiley and Sons
- Year
- 2005
- Tongue
- English
- Weight
- 282 KB
- Volume
- 202
- Category
- Article
- ISSN
- 0031-8965
No coin nor oath required. For personal study only.
β¦ Synopsis
Abstract
In this study we present the first results achieved on the growth of carbon nanotubes (CNT) in both continuous mode (CM) and pulsed mode (PM) microwave plasma assisted chemical vapour deposition (MPACVD). The interest of this work is to determine the influence of the discharge parameters on the CNT properties such as diameter, length, density β¦ etc. The experiments were carried out at a sustrate temperature around 900 Β°C. The catalyst used was nanostructured FeβSiO deposited on silicide. It was found that the formation of multiwalls carbone nanotubes (MWCNTs) occurs when varying the discharge parameter from the CM to the PM and a selective growth of bundles of MWCNTs is obtained in the optimal PM plasma mode conditions. The measured diameter of isolated MWCNTs in the CM is around 20 nm. We measured a decrease of the amorphous carbon structures by a factor 7 and an increase of the CNT density by a factor 3 from the CM to the PM, confirming that the pulsed mode is more suitable for the MWCNT growth. (Β© 2005 WILEYβVCH Verlag GmbH & Co. KGaA, Weinheim)
π SIMILAR VOLUMES
We combine in situ X-ray photoelectron spectroscopy and ex situ electron and Raman spectroscopy to study chemical interactions of SiO 2 -supported Fe catalyst films during C 2 H 2 exposure in the 400-600 1C temperature range. Carbon nanotubes nucleate at C 2 H 2 pressures below 10 Γ6 mbar, which all
## Abstract We report in this study, the growth of silicon carbide nanofibers on silicon substrates covered by Fe thin film catalyst using microwave plasma assisted chemical vapour deposition. The silicon source is the substrate itself. The growth morphology, microstructure, and defects on SiC nano