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Experimental realization of the bound state resonant tunneling transistor

โœ Scribed by Chen, W.L.; Haddad, G.I.; Munns, G.O.; East, J.R.


Book ID
114535321
Publisher
IEEE
Year
1993
Tongue
English
Weight
273 KB
Volume
40
Category
Article
ISSN
0018-9383

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Experimental analysis of resonant tunnel
โœ Takao Waho; Steffen Koch; Takashi Mizutani ๐Ÿ“‚ Article ๐Ÿ“… 1994 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 160 KB

We systematically estimate the resonant tunneling transit time from the high-frequency characteristics of resonant tunneling transistors. It is found that the transit time across an InGaAs/InAlAs resonant tunneling structure is more than one order of magnitude shorter than that for \(\mathrm{GaAs} /