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Experimental Investigations on the Influence of Surface and Interface Recombination on the Minority Carrier Lifetime in LPE-GaP :N, Si VPE-GaP:N, Te, and VPE-GaAs0.12P0.88:N, Te

✍ Scribed by Gehrke, Elke ;Wandel, K. ;Weinert, H.


Publisher
John Wiley and Sons
Year
1986
Tongue
English
Weight
419 KB
Volume
96
Category
Article
ISSN
0031-8965

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