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Experimental investigation of ESD design window for fully depleted SOI N-MOSFETs

✍ Scribed by Thomas Benoist; Claire Fenouillet-Beranger; Pierre Perreau; Christel Buj; Philippe Galy; David Marin-Cudraz; Olivier Faynot; Sorin Cristoloveanu; Pierre Gentil

Book ID: 104053010
Publisher: Elsevier Science
Year: 2011
Tongue: English
Weight: 602 KB
Volume: 88
Category: Article
ISSN: 0167-9317
DOI: 10.1016/j.mee.2011.03.112

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