Experimental characterization of statistically independent defects in gate dielectrics-part I: description and validation of the model

✍ Scribed by Driussi, F.; Widdershoven, F.; Esseni, D.; Selmi, L.; van Duuren, M.J.

• Book ID: 114617791
• Publisher: IEEE
• Year: 2005
• Tongue: English
• Weight: 460 KB
• Volume: 52
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2005.846349