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Experimental Assessment of the Nonuniform Radiation-Induced Space-Charge Distribution in the Surface Region of Silicon

✍ Scribed by A. E. Atamuratov; A. Yusupov; K. Adinaev

Book ID
110366999
Publisher
SP MAIK Nauka/Interperiodica
Year
2001
Tongue
English
Weight
31 KB
Volume
37
Category
Article
ISSN
0020-1685

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The action of atomic hydrogen on clean cleaved (1 1 1) surfaces of highly doped silicon samples, both phosphorus ([n] 2 x 10 I" cm ~) and boron ([p]-4 Γ— 1(1 ~ cm 3) doped has been compared to the case of lightly doped samples (In] = 1 Γ— 10 ~4 cm ~). Once cleaved under ultra high vacuum, the samples