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Experimental and theoretical investigation of the effect of SiO2 content in gate dielectrics on work function shift induced by nanoscale capping layers
✍ Scribed by Caraveo-Frescas, J. A.; Wang, H.; Schwingenschlögl, U.; Alshareef, H. N.
- Book ID
- 120980260
- Publisher
- American Institute of Physics
- Year
- 2012
- Tongue
- English
- Weight
- 982 KB
- Volume
- 101
- Category
- Article
- ISSN
- 0003-6951
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