Experimental and theoretical examination of orientation effect on piezoelectric charge at gate periphery in AlGaN/GaN HFETs

✍ Scribed by Ishida, H.; Murata, T.; Ishii, M.; Hirose, Y.; Uemoto, Y.; Tanaka, T.; Ueda, D.

• Book ID: 114618327
• Publisher: IEEE
• Year: 2006
• Tongue: English
• Weight: 357 KB
• Volume: 53
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2006.876398