Experimental and analytical investigation of single event, multiple bit upsets in poly-silicon load, 64 K×1 NMOS SRAMs

✍ Scribed by Song, Y.; Vu, K.N.; Cable, J.S.; Witteles, A.A.; Kolasinski, W.A.; Koga, R.; Elder, J.H.; Osborn, J.V.; Martin, R.C.; Ghoniem, N.M.

• Book ID: 114554656
• Publisher: IEEE
• Year: 1988
• Tongue: English
• Weight: 420 KB
• Volume: 35
• Category: Article
• ISSN: 0018-9499
• DOI: 10.1109/23.25520