✦ LIBER ✦

Experimental analysis of temperature dependence of oscillation wavelength in quantum-well FP semiconductor lasers

✍ Scribed by Higashi, T.; Yamamoto, T.; Ogita, S.; Kobayashi, M.

Book ID: 117869027
Publisher: IEEE
Year: 1998
Tongue: English
Weight: 266 KB
Volume: 34
Category: Article
ISSN: 0018-9197
DOI: 10.1109/3.709584

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Experimental analysis of characteristic

Experimental analysis of characteristic temperature in quantum-well semiconductor lasers

✍ Higashi, T.; Yamamoto, T.; Ogita, S.; Kobayashi, M. 📂 Article 📅 1997 🏛 IEEE 🌐 English ⚖ 244 KB

Determination of the wavelength dependen

Determination of the wavelength dependence of Auger recombination in long-wavelength quantum-well semiconductor lasers using hydrostatic pressure

✍ Silver, M.; O'Reilly, E.P.; Adams, A.R. 📂 Article 📅 1997 🏛 IEEE 🌐 English ⚖ 264 KB

Orientation dependence of optical proper

Orientation dependence of optical properties in long wavelength strained quantum-well lasers

✍ Niwa, A.; Ohtoshi, T.; Kuroda, T. 📂 Article 📅 1995 🏛 IEEE 🌐 English ⚖ 583 KB

Polarization dependence of photo-detecti

Polarization dependence of photo-detection in strained multiple quantum-well semiconductor lasers

✍ Higashi, T.; Ikeda, T.; Ogita, S.; Morito, K.; Soda, H. 📂 Article 📅 1995 🏛 IEEE 🌐 English ⚖ 653 KB

Analysis of temperature-dependent optica

Analysis of temperature-dependent optical gain in GaN-InGaN quantum-well structures

✍ Witzigmann, B.; Laino, V.; Luisier, M.; Schwarz, U.T.; Fischer, H.; Feicht, G.; 📂 Article 📅 2006 🏛 IEEE 🌐 English ⚖ 134 KB

The Hydrostatic Pressure Dependence of t

The Hydrostatic Pressure Dependence of the Threshold Current in 1.3 μm InGaAsP Quantum Well Semiconductor Diode Lasers

✍ A. F. Phillips; S. J. Sweeney; A. R. Adams; P. J. A. Thijs 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 191 KB 👁 1 views

We have measured the change in threshold current and lasing photon energy as a function of pressure in 1.3 mm semiconductor quantum well lasers. We observe a decrease in threshold current with increasing pressure indicative of an Auger recombination process which decreases as the band gap increases.