Expanding Emission Wavelength on Nitride Light-Emitting Devices

✍ Scribed by Mukai, T. ;Nagahama, S. ;Yanamoto, T. ;Sano, M.

• Publisher: John Wiley and Sons
• Year: 2002
• Tongue: English
• Weight: 97 KB
• Volume: 192
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/1521-396x(200208)192:2<261::aid-pssa261>3.0.co;2-u

✦ Synopsis

First, we review the recent progress on nitride-based light-emitting diodes (LEDs) and discuss the relation between dislocation density and luminous efficiency. We also discuss a method to improve the external quantum efficiency of nitride-based LEDs. Secondly, group-III nitride laser diodes (LDs) which emit from near-ultraviolet to pure-blue are reviewed. Reducing the threading dislocation density can increase the lifetime of nitride LDs. Using an epitaxial lateral overgrowth technique, a dislocation density of the order of 10 5 cm --2 has been obtained. The relation between the lifetime of nitride LDs and the dislocation density are discussed. Finally, near-ultraviolet LDs and pure-blue LDs are described.