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Existence of Weak Solutions of the Drift Diffusion Model Coupled with Maxwell's Equations

✍ Scribed by F. Jochmann

Publisher: Elsevier Science
Year: 1996
Tongue: English
Weight: 240 KB
Volume: 204
Category: Article
ISSN: 0022-247X
DOI: 10.1006/jmaa.1996.0460

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✦ Synopsis

E,H obeys Maxwell's equations 1.4 , 1.5 , and 1.6 . The unknown Ž . w . functions , , E, H depend on t, x g 0, ϱ , where t, x denote the time 1 2 and space variable resp. ⍀ ; ‫ޒ‬ 3 is a bounded Lipschitz-domain with Ѩ ⍀ s ⌫ j ⌫ , where ⌫ , ⌫ are disjoint subsets of Ѩ ⍀. ⌫ represents the D N D N D perfectly conducting Ohmic contacts and ⌫ represents the insulating N boundary of the semiconductor device. The mobilities , of the holes 1 2 and electrons resp. are assumed to be positive constants. The diffusion coefficients D , D and the recombination generation rate R are functions 1 2 of the densities , and the space variable x. C is a bounded function of 1 2

x, which describes the doping profile of the device.

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