β Scribed by Hoang Ngoc Cam; Nguyen Van Hieu; Nguyen Ai Viet
No coin nor oath required. For personal study only.
is applied to study of the Wannier-Mott excitons in direct band gap cubic semiconductors with a fourfold degenerate highest valence band. The tine structure of exciton energy levels is investigated.
General formulae are derived for the matrix elements of the perturbation.
From these expressions it is straightforward to obtain values of the tine structure splittings of the energy levels and the wave functions of corresponding states in any order of perturbation theory. A comparison with results of previous works is made.
π SIMILAR VOLUMES
The renormalization procedure of perturbation theory is applied to study polariton effects in the optical processes involving photons with energies near that of an exciton: resonant Raman scattering, resonant electronic Raman scattering, and resonant highorder optical harmonic generation. To demonst
to Professor Dr. Roland Zimmermann on the occasion of his 60th birthday The role of excitonic excitations in wide-gap II-VI and nitride semiconductors is reviewed with focus on the recent research at Bremen University. More-particle excitations such as trions and biexcitons are studied including th