Excitons bound to nitrogen complexes in heavily doped GaAs1−xNx grown on GaAs misoriented substrates

✍ Scribed by F. Bousbih; S. Ben Bouzid; R. Chtourou; J.C. Harmand

• Publisher: Elsevier Science
• Year: 2004
• Tongue: English
• Weight: 141 KB
• Volume: 112
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/j.mseb.2004.05.008