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Exciton transport in SiO2 as a possible cause of surface-state generation in MOS structures

✍ Scribed by Weinberg, Z. A.; Rubloff, G. W.


Book ID
121713356
Publisher
American Institute of Physics
Year
1978
Tongue
English
Weight
405 KB
Volume
32
Category
Article
ISSN
0003-6951

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