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Exciton migration and recombination enhancement in GaAs/AlAs single quantum wells under resonant excitation

✍ Scribed by H. Yu; R. Murray

Publisher
Italian Physical Society
Year
1995
Tongue
English
Weight
215 KB
Volume
17
Category
Article
ISSN
0392-6737

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Using luminescence upconversion with 100 fs resolution, we have investigated the intersubband scattering of electrons in GaAs quantum wells (QWs). The energy separations between the first and second confined electron subband (E 12 ) were more or less than the LO phonon energy (E LO ). In narrow QWs