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Exciton localization and temperature stability in self‐organized InAs quantum dots

✍ Scribed by Lubyshev, D. I.; Gonzalez‐Borrero, P. P.; Marega, E.; Petitprez, E.; La Scala, N.; Basmaji, P.

Book ID
119942308
Publisher
American Institute of Physics
Year
1996
Tongue
English
Weight
358 KB
Volume
68
Category
Article
ISSN
0003-6951

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The spin dynamics in self-organized InAs/GaAs quantum dots have been studied by time-resolved photoluminescence performed under strictly resonant excitation conditions. It is demonstrated that the carrier spins in these nanostructures are totally frozen on the scale of the exciton lifetime.

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We have investigated the temperature dependence of photoluminescence (PL) properties of a number of InAs/GaAs heterostructures with InAs layer thickness ranging from 0.5 monolayer (ML) to 3 ML. The temperature dependence of the InAs exciton energy and linewidth was found to display a significant dif