Exciton lifetime measurements on single silicon quantum dots
β Scribed by Sangghaleh, Fatemeh; Bruhn, Benjamin; Schmidt, Torsten; Linnros, Jan
- Book ID
- 120398039
- Publisher
- Institute of Physics
- Year
- 2013
- Tongue
- English
- Weight
- 524 KB
- Volume
- 24
- Category
- Article
- ISSN
- 0957-4484
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π SIMILAR VOLUMES
A theory of intrinsic radiative lifetimes of excitons in semiconductor quantum dots is presented. Simple closed-form expressions for the decay times are obtained for quantum dots fabricated from quasi-two-dimensional systems. In particular, the intrinsic temperature-dependent photoluminescence decay
## Abstract The photoluminescence properties of silicon quantum dots may be tailored by surface states via efficient coupling to resonant bulk states. Therefore various wetβchemistry procedures were developed to fabricate silicon quantum dots with adjustable sizes and surface properties. While the