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Exciton binding energies of layer-type semiconductors GaSe and GaTe

✍ Scribed by M. Grandolfo; E. Gratton; F. Anfosso Somma; P. Vecchia

Publisher
John Wiley and Sons
Year
1971
Tongue
English
Weight
393 KB
Volume
48
Category
Article
ISSN
0370-1972

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Binding energy and stability of charged
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The binding energy of full three-dimensional (3-D) charged excitons confined in a semiconductor cylindrical quantum dot (QD) is theoretically investigated using a variational procedure within the effective mass approximation. We predicted a trial wave function to not only satisfy the strong confinem