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Excitation wavelength and intensity dependence of luminescence decay in a-Si(H)

โœ Scribed by Jagdeep Shah; B.G. Bagley; F.B. Alexander Jr.

Publisher
Elsevier Science
Year
1980
Tongue
English
Weight
484 KB
Volume
36
Category
Article
ISSN
0038-1098

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Transient reflectance changes in a polydiacetylene-toluene-sulfonate (PDA-TS) single crystal were found to be induced by pulsed excitations at 2.33 eV (532 nm), 3.49 eV (355 nm), and 4.66 eV (266 nm). The negative reflectance change around 1.4 eV, observed only by excitations at 4.66 and 3.49 eV was