In an adiabatic approach, the efficiency of the electron-phonon interaction (EPI) can be determined by measuring the ratio between the intensities of two of the phonon replicas that EPI induces in photoluminescence (PL) spectra. In low-dimensional structures such as InAs/GaAs quantum dots (QDs), thi
Exchange interaction in InAs nanocrystal quantum dots
โ Scribed by U. Banin; J.C. Lee; A.A. Guzelian; A.V. Kadavanich; A.P. Alivisatos
- Publisher
- Elsevier Science
- Year
- 1997
- Tongue
- English
- Weight
- 315 KB
- Volume
- 22
- Category
- Article
- ISSN
- 0749-6036
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โฆ Synopsis
The near band-gap level structure in high-quality colloidal InAs nanocrystal quantum dots within the very strong confinement regime is investigated. Size-selective photoluminescence excitation and fluorescence line narrowing measurements reveal a size-dependent splitting between the absorbing and the emitting states. The splitting is assigned to the confinementenhanced electron-hole exchange interaction. The size dependence of the splitting significantly deviates from the idealized 1/r 3 scaling law for the exchange splitting. A model incorporating a finite barrier which allows for wavefunction leakage is introduced. The model reproduces the observed 1/r 2 dependence of the splitting and good agreement with the experimental data is obtained. The smaller barriers for embedded InAs dots grown by molecular-beam epitaxy, are predicted to result in smaller exchange splitting as compared with colloidal dots with a similar number of atoms.
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