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Exchange energy density of inhomogeneous electron gas near a metal surface

✍ Scribed by L. Miglio; M.P. Tosi; N.H. March


Publisher
Elsevier Science
Year
1981
Weight
68 KB
Volume
111
Category
Article
ISSN
0167-2584

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We have shown that for quantum wells placed close to the stress-free surface of the semiconductor heterostructure, the energy relaxation rate of two-dimensional electrons interacting with acoustic phonons at low temperatures (Bloch-GrΓΌneisen regime) is changed considerably in comparison with that of