Excess Lorentzian noise in partially depleted SOI nMOSFETs induced by an accumulation back-gate bias

✍ Scribed by Lukyanchikova, N.; Garbar, N.; Smolanka, A.; Simoen, E.; Claeys, C.

• Book ID: 111676730
• Publisher: IEEE
• Year: 2004
• Tongue: English
• Weight: 150 KB
• Volume: 25
• Category: Article
• ISSN: 0741-3106
• DOI: 10.1109/led.2004.828961