Excellence award for InP but SiC and GaN come crowding in
✍ Scribed by Gail Purvis
- Book ID
- 104367977
- Publisher
- Elsevier Science
- Year
- 2005
- Tongue
- English
- Weight
- 127 KB
- Volume
- 18
- Category
- Article
- ISSN
- 0961-1290
No coin nor oath required. For personal study only.
✦ Synopsis
Excellence award for InP but SiC and GaN come crowding in Vitesse was recently presented with Frost & Sullivan's 2005 'Technology Innovation of the Year Award', for its innovative $6m VIP-2 InP HBT technology. But more recent DARPA awards focus on GaN and SiC. With contracts worth between $125.8m-$163.2m, GaN devices, with SiC substrates, can hardly fail to be seen as InP's successors. Cree Inc received its $19.7m cost share/ technology investment agreement contract for SiC MMIC devices.The objective of the agreement is to establish a domestic source manufacturing capability for SiC MMIC devices for commercial applications and next generation military radar systems. DARPA's research strategy for technlogical advantage is through 'the next-generation semiconductor materials Gallium Nitride and Silicon Carbide, which will be the 'substrate material of choice for GaN circuits.' Cree also received a previous SiC-research contract, and is teamed with Raytheon for part of DARPA's GaN research strategy.Work on issuing this contract began in March 2005.The negotiations were