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Examination of deposition conditions for SrSnO3 insulating layer for single flux quantum circuits

โœ Scribed by H. Wakana; Ai Kamitani; S. Adachi; K. Nakayama; Y. Ishimaru; Y. Tarutani; K. Tanabe


Book ID
103890700
Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
260 KB
Volume
426-431
Category
Article
ISSN
0921-4534

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Design of single flux quantum cells for
โœ H. Akaike; M. Tanaka; K. Takagi; I. Kataeva; R. Kasagi; A. Fujimaki; K. Takagi; ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 429 KB

We present design of single flux quantum (SFQ) cells for a 10-Nb-layer process which has been developed to fabricate SFQ VLSI circuits. The device fabricated by the process has a structure of an active layer on the top, two passive transmission line (PTL) layers in the middle, and a DC power (DCP) l