✍ Scribed by Z. Wang; R.J. Nemanich; D.E. Sayers
No coin nor oath required. For personal study only.
Using EXAFS and XRD techniques, we have investigated the phase formation of Co/SiGe structures at several annealing temperatures. For the Co/Sio.aoGeo.2o samples annealed from 400°C to 600°C, Co(Sil_rGey) phases with y ~ 0.10 were identified and the coordination number of Si around Co increases as the annealing temperature increases. For the sample annealed at 700°C, only the CoSi2 phase was formed. These results indicate a preferential Co-Si reaction when annealing the Co/SiGe structure.
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