In a previous work [O. Ciftja, Physica B 404 (2009) 227] we reported the exact calculation of energies for the fractional quantum Hall Laughlin state at filling factor n ΒΌ 1 3 for systems with up to N ΒΌ 4 electrons in a disk geometry. The purpose of this brief extension of the earlier work is to rep
Exact results for systems of electrons in the fractional quantum Hall regime
β Scribed by O. Ciftja
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 127 KB
- Volume
- 404
- Category
- Article
- ISSN
- 0921-4526
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β¦ Synopsis
There has been a great deal of interest over the last two decades on the fractional quantum Hall effect, a novel quantum many-body liquid state of strongly correlated two-dimensional electronic systems in a strong perpendicular magnetic field. The most pronounced fractional quantum Hall states occur at odd denominator filling factors of the lowest Landau level and are described by the Laughlin wave function. It is well known that exact closed-form solutions for many-body wave functions, including the Laughlin wave function, are generally very rare and hard to obtain. In this work we present some exact results corresponding to small systems of electrons in the fractional quantum Hall regime at odd denominator filling factors. Use of Jacobi coordinates is the key tool that facilitates the exact calculation of various quantities. Expressions involving integrals over many variables are considerably simplified with the help of Jacobi coordinates allowing us to calculate exactly various quantities corresponding to systems with several electrons.
π SIMILAR VOLUMES
A recent mean-field approach to the fractional quantum Hall effect (QHE) is reviewed, with a special emphasis on the application to single-electron tunneling through a quantum dot in a high magnetic field. The theory is based on the adiabatic principle of Greiter and Wilczek, which maps an incompres
We investigated two-dimensional electron-(2DES) and hole systems (2DHS) in the fractional quantum Hall regime for filling factors n ΒΌ 1/3 and n ΒΌ 2/3. Due to a metallic top gate we are able to vary the electron-/hole density of the samples over a wide range. Measuring activated transport on these sy