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Evolution and stability of basal plane dislocations during bulk growth of highly n-type doped versus highly p-type doped 6H-SiC

✍ Scribed by S. A. Sakwe; R. Müller; D. Queren; U. Künecke; P. J. Wellmann


Publisher
John Wiley and Sons
Year
2006
Tongue
English
Weight
208 KB
Volume
3
Category
Article
ISSN
1862-6351

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