Evidences for the Existence of a High-Carrier-Density Layer near Undoped-GaN/α-Al2O3 Substrate Interface

✍ Scribed by Yamamoto, A. ;Azuma, K. ;Ueno, K. ;Tsuji, Y. ;Hashimoto, A.

• Publisher: John Wiley and Sons
• Year: 1999
• Tongue: English
• Weight: 140 KB
• Volume: 176
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/(sici)1521-396x(199911)176:1<689::aid-pssa689>3.0.co;2-f